JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
TO-251
TO-252-2L
123
2SB1261-Z
FEATURES
TRANSISTOR (PNP)
1
1. BASE
123
High h
FE
h
FE=
100 to 400
Low v
CE(sat)
v
CE(sat)
≤0.3V
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-7
-3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
2. COLLECTOR
3. EMITTER
1
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
CLASSIFICATION OF
Rank
Range
h
FE(1)
M
100-200
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
unless
Test
otherwise
conditions
specified)
MIN
-60
-60
-7
-10
-10
60
100
50
-0.3
-1.2
50
40
0.5
2.0
0.5
µs
V
V
MHz
pF
400
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-7V, I
C
=0
V
CE
=-2V, I
C
=-200mA
V
CE
=-2V, I
C
=-600mA
V
CE
=-2V, I
C
=-2A
I
C
=-1.5A, I
B
=-150mA
I
C
=-1.5A, I
B
=-150mA
V
CE
=-5V, I
C
=-1.5A
V
CB
=-10V, I
E
=0, f=1MHz
V
CC
=-10V, I
C
=-1A, I
B1
=-I
B2
=-0.1A,
R
L
=10Ω
L
160-320
K
200-400
Typical Characteristics
2SB1261-Z
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