JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SB1426
TRANSISTOR (PNP)
1. EMITTER
2. BASE
3. COLLECTOR
FEATURES
General Purpose Switching and Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-3
750
166
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
*
Test
conditions
Min
-20
-20
-6
Typ
Max
Unit
V
V
V
I
C
= -0.05mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.05mA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V, I
C
=-0.1A
I
C
=-2A,I
B
=-0.1A
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-2V,I
C
=-0.5A, f=100MHz
-0.1
-0.1
82
35
240
390
-0.5
μA
μA
V
pF
MHz
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
A,Dec,2010
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