JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SB647/2SB647A
TRANSISTOR (PNP)
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
FEATURES
Low Frequency Power Amplifier
Complementary Pair with 2SD667/A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
2SB647
2SB647A
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Value
-120
-80
-100
-5
-1
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)*
h
FE(2) *
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
V
CE(sat)
V
BE
f
T
*
*
Test
conditions
2SB647
2SB647A
Min
-120
-80
-100
-5
Typ
Max
Unit
V
V
V
I
C
= -10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-100V,I
E
=0
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-150mA
2SB647
2SB647A
-10
60
60
30
-1
-1.5
20
140
320
200
μA
V
V
pF
MHz
C
ob
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
CLASSIFICATION OF h
FE(1)
TYPE
2SB647A
RANK
RANGE
B
60-120
C
100-200
D
160-320
2SB647
A,Dec,2010
电子工程世界
综合技术交流
