JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SB649/2SB649A
TRANSISTOR
(PNP)
TO- 126C
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
2SB649
2SB649A
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-120
-160
-5
-1.5
1
150
-55-150
V
A
W
℃
℃
V
Value
-180
Unit
V
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
unless
Test
otherwise
specified)
Min
Typ
Max
Unit
V
V
V
conditions
I
C
=
-1
mA,I
E
=0
I
C
=
-10
mA,I
B
=0
2SB649
2SB649A
I
E
=
-1m
A, I
C
=0
V
CB
=
-160
V,I
E
=0
V
EB
=
-4
V,I
C
=0
V
CE
=-5V,I
C
=
-150
mA
2SB649
2SB649A
V
CE
=
-5
V,I
C
=
-500
mA
I
C
=
-500
mA,I
B
=
-50
mA
V
CE
=
-5
V,I
C
=
-150
mA
V
CE
=
-5
V,I
C
=
-150
mA
V
CB
=
-10
V,I
E
=0,f=
1
MHz
-180
-120
-160
-5
-10
-10
60
60
30
-1
-1.5
140
27
D
160-320
320
200
µA
µA
DC current gain
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
2SB649
2SB649A
h
FE(1)
B
60-120
60-120
C
100-200
100-200
A,Jun,2011
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