JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
2SB649/2SB649A
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
High Collector Current
High Collector-Emitter Breakdown Voltage
Low Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
2SB649
2SB649A
Value
-180
-120
-160
-5
-1.5
750
167
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
Test
conditions
2SB649
2SB649A
Min
-180
-120
-160
-5
Typ
Max
Unit
V
V
V
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-160V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-5V,
I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-150mA
2SB649
2SB649A
-10
-10
60
60
30
-1
-1.5
27
140
320
200
μA
μA
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
V
CE(sat)
V
BE
C
ob
f
T
V
V
pF
MHz
CLASSIFICATION OF h
FE(1)
TYPE
RANK
RANGE
B
60-120
2SB649
2SB649A
C
100-200
D
160-320
A,Dec,2010
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