JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SB709A
TRANSISTOR (PNP)
FEATURES
For general amplification
Complementary to 2SD601A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
1.
BASE
2.
EMITTER
3.
COLLECTOR
Value
-45
-45
-7
-100
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
Test conditions
I
C
= -10
μ
A, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -20 V, I
E
=0
V
CE
= -10V, I
B
=0
V
CE
= -10V,I
C
= -2mA
I
C
=-100 mA, I
B
= -10mA
V
CE
= -10V, I
C
= -1mA
60
160
Min
-45
-45
-7
-0.1
-100
460
-0.5
V
Max
Unit
V
V
V
μ
A
μ
A
Transition frequency
f
T
f=
200MHz
V
CB
= -10V, I
E
= 0
MHz
Collector output capacitance
C
ob
f=1
MHz
2.7
pF
CLASSIFICATION OF
h
FE
Rank
Range
Marking
Q
160-260
BQ1
R
210-340
BR1
S
290-460
BS1
A,May,2011
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