2SB834
Plastic-Encapsulate Transistors
Features
Power dissipation
P
CM
:
1.5
W (Tamb=25℃)
PNP
TO-220
Collector current
I
CM
:
-3
A
Collector-base voltage
-60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on Time
Storage Time
Turn-off Time
V
CE(sat)
V
BE
V
CE
=
-5
V, I
C
=
-3
A
I
C
=
-3
A, I
B
=
-0.3
A
V
CE
=
-5
V, I
C
=
-500
mA
V
CE
=
-5
V,I
C
=
-500
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
1. BASE 2. COLLECTOR 3. EMITTER
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-100
µA,
I
E
=0
Ic=
-50
mA, I
B
=0
I
E
=
-100
µA,
I
C
=0
V
CB
=
-60
V, I
E
=0
V
EB
=
-7
V, I
C
=0
V
CE
=
-5
V, I
C
=
-500
mA
-60
-60
-7
-100
-100
60
20
-1
-1
9
150
0.4
µA
µA
200
V
V
MHz
pF
µs
µs
µs
f
T
C
ob
t
on
t
stg
t
off
V
CC
=-
30
V, I
c
=-
2
A,
I
B!
=I
B2
=-0.2A
1.7
0.5
CLASSIFICATION OF h
FE(1)
Rank
Range
O
60-120
Y
100-200
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