JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO – 220
2SB861
TRANSISTOR (PNP)
1. BASE
FEATURES
Low Frequency Power Amplifier Color
TV Vertical Deflection Output
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-200
-150
-6
-2
1.8
69
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
Test
conditions
Min
-200
-150
-6
Typ
Max
Unit
V
V
V
I
C
=-5mA,I
E
=0
I
C
=-50mA,I
B
=0
I
E
=-5mA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-4V, I
C
=-50mA
V
CE
=-10V, I
C
=-500mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-4V, I
C
=-50mA
V
CB
=-100V,I
E
=0, f=1MHz
V
(BR)EBO
-1
-1
60
60
-3
-1
30
200
μA
μA
V
CE(sat)
V
BE
C
ob
V
V
pF
CLASSIFICATION OF h
FE(1)
RANK
RANGE
B
60-120
C
100-200
A,Dec,2010
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