JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SB927
TRANSISTOR (PNP)
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
FEATURES
Low Saturation Voltage
Large Current Capacity and Wide ASO
APPLICATIONS
Power Supplies
Relay Drivers
Lamp Drivers
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-25
-6
-2.5
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE (sat)
C
ob
f
T
Test
conditions
Min
-30
-25
-6
-0.1
-0.1
100
65
-0.6
-1.2
32
150
V
V
pF
MHz
560
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V, I
C
=-0.1A
V
CE
=-2V, I
C
=-1.5A
I
C
=-1.5A,I
B
=-75mA
I
C
=-1.5A,I
B
=-75mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-10V,I
C
=-50mA
CLASSIFICATION OF h
FE(1)
RANK
RANGE
R
100-200
S
140-280
T
200-400
U
280-560
A,Dec,2010
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