JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
TRANSISTOR (NPN)
TO-92L
FEATURES
Low
Collector
to
Emitter Saturation Voltage
V
CE(sat).
Complementary
Pair
with 2SA0683 and 2SA0684.
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
2SC1383
30
25
5
1
1
150
-55-150
2SC1384
60
50
Unit
V
V
V
A
W
℃
℃
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
2SC1383
2SC1384
Collector-emitter breakdown voltage 2SC1383
2SC1384
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
V
CE
=5V, I
C
=1A
I
C
=500m A,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=10V,I
C
=50mA
200
50
0.4
1.2
V
V
MHz
Test
conditions
Min
30
60
25
50
5
0.1
85
340
Typ
Max
Unit
V
V
V
μA
I
C
=10μA ,I
E
=0
I
C
=2mA , I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=500mA
CLASSIFICATION OF h
FE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
A,Jun,2011
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