JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1815
FEATURES
Power dissipation
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
400
125
-55-125
Units
V
V
V
mA
mW
℃
℃
3.BASE
TRANSISTOR (NPN)
TO-92
1.EMITTER
2.COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
Test
conditions
MIN
60
50
5
0.1
0.1
0.1
70
700
0.25
1
80
3.5
10
V
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
uA
uA
uA
I
C
= 100uA, I
E
=0
I
C
= 0. 1mA, I
B
=0
I
E
= 100uA, I
C
=0
V
CB
= 60V,I
E
=0
V
CE
= 50V, I
B
=0
V
EB
=5V,I
C
=0
V
CE
= 6 V, I
C
= 2mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10 V, I
C
= 1mA
f=30MHz
V
CB
=10V,I
E
=0
f=1MHz
V
CE
=6V,I
C
=0.1mA
f =1KHz,R
G
=10K
CLASSIFICATION OF
Rank
Range
h
FE
O
70-140
Y
120-240
GR
200-400
BL
350-700
Typical Characteristics
2SC1815
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