JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC2229
TRANSISTOR (NPN)
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
FEATURES
High Breakdown Voltage
High Transition Frequency
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
150
5
50
800
156
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE (sat)
f
T
Test
conditions
Min
200
150
5
0.1
0.1
70
50
50
0.5
1
80
V
V
MHz
240
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=200V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=30V,I
C
=10mA
CLASSIFICATION OF h
FE(1)
RANK
RANGE
O
70-140
Y
120-240
A,Dec,2010
Typical Characterisitics
20
2SC2229
h
FE
——
I
C
T
a
=100
℃
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
100uA
h
FE
90uA
80uA
70uA
400
(mA)
15
I
C
T
a
=25
℃
100
COLLECTOR CURRENT
10
60uA
50uA
40uA
DC CURRENT GAIN
5
30uA
20uA
I
B
=10uA
0
2
4
6
8
10
30
COMMON EMITTER
V
CE
=5V
10
0.1
0.3
1
3
10
30
50
0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
0.30
V
CEsat
——
I
C
1.0
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.24
0.8
0.18
T
a
=25
℃
0.6
T
a
=100
℃
0.12
T
a
=100
℃
T
a
=25
℃
0.06
0.4
β=10
0.00
0.1
0.3
1
3
10
30
100
0.2
0.1
0.3
1
3
10
β=10
30
50
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
50
30
I
C
COMMON EMITTER
V
CE
=5V
T
a
=100
℃
—— V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
C
ib
30
T
a
=25
℃
10
COLLECTOR CURRENT
3
CAPACITANCE
C
10
(pF)
I
C
T
a
=25
℃
1
C
ob
3
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
800
600
400
200
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Dec,2010
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