JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
1. EMITTER
2SC2230/2230A
TRANSISTOR (NPN)
FEATURE
High voltage: V
CEO
=180V(2SC2230A)
High DC Current Gain
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
2SC2230
2SC2230A
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
200
160
180
5
0.1
0.8
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
（
h
FE2
V
CE(sat)
V
BE
unless
Test
otherwise
conditions
specified)
Min
200
Max
Unit
V
V
V
0.1
0.1
120
80
0.5
0.5
50
7
0.7
V
V
MHz
pF
400
µA
µA
I
C
= 100µA , I
E
=0
I
C
= 10 mA, I
B
=0
2SC2230
2SC2230A
I
E
= 10µA, I
C
=0
V
CB
=200V, IE=0
V
EB
=5V, IC=0
V
CE
=10 V, IC= 10mA
V
CE
=10 V, IC= 50mA
I
C
= 50m A, I
B
= 5mA
I
C
= 1 mA, VCE= 10V
V
CE
= 10 V, I
C
= 10mA
V
CB
=10V,I
E
=0,f=1MHz
160
180
5
f
T
C
ob
CLASSIFICATION OF h
FE1
Rank
Range
Y
120-240
GR
200-400
A,Jun,2011
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