JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S
2SC2999
TRANSISTOR
Plastic-Encapsulate Transistors
TO-92S
(
NPN
)
FEATURES
.High f
T
and small C
re
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Value
25
20
3
30
400
125
-40-125
Units
V
V
V
mA
mW
℃
℃
3. BASE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer Capacitance
Base-to-Collector Time Constant
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
re
rbb’c
c
NF
Test
conditions
MIN
25
20
3
0.1
0.1
40
450
750
0.6
0.9
19
2.2
200
MHz
pF
ps
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA,I
C
=0
V
CB
=10V, I
E
=0
V
EB
=3V,I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=4mA
V
CB
=6V,
f=1MHz
V
CE
=6V, I
C
=1mA,,f=31.9MH
Z
V
CE
=6V, I
C
=1mA,,f=100MH
Z
CLASSIFICATION OF
Rank
Range
h
FE
C
40-80
D
60-120
E
100-200
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