DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
4.5±0.1
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
• Low Noise and High Gain
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
• Large P
T
in Small Package
P
T
: 2 W with 16 cm
2
×
0.7 mm Ceramic Substrate.
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V,
0.8 MIN.
E
0.42
±0.06
1.6±0.2
1.5±0.1
C
B
0.42±0.06
1.5
0.47
±0.06
3.0
0.41
+0.05
−0.03
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
*
R
th(j-a)
*
T
j
T
stg
2
20
12
3.0
100
1.2
62.5
150
−65
to +150
V
V
V
mA
W
°C/W
°C
°C
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
* mounted on 16 cm
×
0.7 mm Ceramic Substrate
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
4.0±0.25
2.5±0.1
©
1985
2SC3357
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
*
f
T
C
re
**
S
21
e
2
NF
NF
50
120
6.5
0.65
9
1.1
1.8
3.0
1.0
MIN.
TYP.
MAX.
1.0
1.0
300
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
µ
A
µ
A
*
Pulse Measurement PW
≤
350
µ
s, Duty Cycle
≤
2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
h
FE
Classification
Class
Marking
h
FE
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to 250
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
P
T
-Total Power Dissipation-W
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
2.0
C
re
-Feed-back Capacitance-pF
Ceramic Substrate
16 cm
2
×
0.7 mm
1.0
1
Free Air
0.5
R
th(j-a)
312.5 ˚C/W
0
50
100
150
0.3
0
0.5
1
2
5
10
20
30
T
A
-Ambient Temperature-°C
V
CB
-Collector to Base Voltage-V
2
2SC3357
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 10 V
15
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GHz
|S
21e
|
2
-Insertion Gain-dB
h
FE
-DC Current Gain
100
10
50
5
20
10
0.5
1
5
10
50
0
0.5
1
5
10
50 70
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
10
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
f
T
-Gain Bandwidth Product-MHz
5.0
3.0
2.0
1.0
0.5
0.3
0.2
V
CE
= 10 V
0.1
0
0.5 10
5.0
10
30
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
V
CE
= 10 V
f = 1.0 GHz
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
20
|S
21e
|
2
10
V
CE
= 10 V
I
C
= 20 mA
0
0.1
0.2
0.4
0.6 0.8 1.0
f-Frequency-GHz
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
−80
NF-Noise Figure-dB
5
4
3
2
IM
2
, IM
3
(dB)
−70
IM
3
−60
IM
2
−50
0
0.5
1
5
10
50 70
I
C
-Collector Current-mA
−40
V
CE
= 10 V
at V
0
= 100 dB
µ
V/50
Ω
R
g
= R
e
= 50
Ω
IM
2
f = 90 + 100 MHz
IM
3
f = 2
×
200
−
190 MHz
20
30
40
50
60
70
I
C
-Collector Current-mA
−30
3
2SC3357
S-PARAMETER
V
CE
= 10 V, I
C
= 40 mA, Z
O
= 50
Ω
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.196
0.103
0.056
0.024
0.008
0.039
0.072
0.102
0.129
0.151
∠
S
11
−94.4
−118.3
−131.1
−43.7
−2.0
13.1
11.8
9.6
8.6
9.8
S
21
13.023
6.852
4.632
3.527
2.854
2.421
2.118
1.887
1.681
1.579
∠
S
21
102.4
89.2
78.3
75.9
68.7
65.7
59.0
57.1
52.5
51.4
S
12
0.043
0.081
0.118
0.152
0.188
0.218
0.255
0.278
0.308
0.339
∠
S
12
74.5
77.4
77.5
78.0
78.4
75.7
71.7
73.1
71.3
71.8
S
22
0.444
0.398
0.399
0.414
0.440
0.461
0.479
0.499
0.515
0.537
∠
S
22
−21.1
−25.3
−26.9
−28.9
−33.5
−33.3
−36.3
−35.5
−38.8
−35.9
V
CE
= 10 V, I
C
= 20 mA, Z
O
= 50
Ω
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.130
0.073
0.037
0.010
0.024
0.056
0.093
0.124
0.151
0.174
∠
S
11
−109.2
−134.1
−146.6
177.1
23.7
17.2
13.8
12.0
11.0
13.4
S
21
13.430
6.930
4.690
3.560
2.878
2.439
2.133
1.898
1.693
1.591
∠
S
21
98.1
87.2
79.4
75.2
68.2
65.4
59.0
57.3
52.9
52.0
S
12
0.042
0.081
0.119
0.154
0.191
0.220
0.257
0.280
0.311
0.341
∠
S
12
79.0
80.6
79.4
79.7
76.5
76.8
72.9
74.0
72.4
72.8
S
22
0.403
0.382
0.392
0.412
0.440
0.463
0.483
0.504
0.519
0.542
∠
S
22
−22.1
−24.7
−25.6
−27.1
−31.9
−32.3
−35.7
−35.3
−38.4
−36.3
4
2SC3357
S
11e
, S
22e
-FREQUENCY
CONDITION
V
CE
= 10 V
0.
0.
0. 06
44
8
0.0 2
0.4
0.9
1.0
0.8
1.2
9
0.0
1
0.4
0.10
0.40
0.11
0.39
100
0.12
0.38
0.13
0.37
90
0.14
0.36
80
0.15
0.35
110
0.7
70
1.4
0.1
6
0.3
4
1.8
0.
5
0.
43
0
13
0.6
0.2
1.6
07
0
12
6
00
0.1
0.3
7
3
0 .0
0.4
5
5
POS
14
ITIV
0
ER
EA
CT
AN
+
–– JX
CE
Z
O
––
CO
M
PO
N
T
EN
0.4
2.0
50
0.
1
0. 8
32
19
0.
31
0.
1
0.2
9
0.2
0
0.2 0
30
40
0.3
WAVELE
NGTH
S
0.02
TOWARD
0.0
GENE
0.48
.47
3
RA
0
0.4
REFLECTION
COEFFCIENT
I
0.0
TOR
3
TOW
7
N
DE
46
0.0
THS
ANGLE
OF
4
G
GRE
0.
EN
160
0.4
ES
0
4
EL
−
6
0.0
AV
W
15
0
)
(
0
1.
0.01
0.49
S
11
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
0
0.49
0.48
0.01
0.02
RD
LOAD
A
0.1
I
C
=
0.6
20 mA
0.
8
I
C
= 20 mA
f = 2.0 GHz
3.
0
T
NEN
PO
0
0.2
OM
EC
NC
TA
X –
AC
−
J –
O
RE
––Z
E
IV
AT
50
−
1
0.3
(
5
0.4
5
0.0
4
4
0.
06
40
0.
−
1
0.
4
0.
5
2.0
0.6
1.6
S
21e
-FREQUENCY
CONDITION
V
CE
= 10 V
I
C
= 20 mA
90°
120°
f = 0.2 GHz
60°
150°
S
21e
30°
150°
S
12e
f = 2.0 GHz
180°
3
6
9
12
15
0° 180°
−150°
−30°
−150°
−120°
−90°
−60°
4
0.3
6
3
0.1
0.3
7
0.1
60
−
0.7
0.8
0.9
1.2
1.4
1.0
1.8
120°
f = 2.0 GHz
f = 0.2 GHz
0.1
0.2
0.3
0.4 0.5
0°
−120°
−90°
4.0
)
32
0.
8
1
0.
−
5
0
0.35
0.15
−
70
0.36
0.14
−
80
1.0
1.
10
f = 0.2 GHz
0.4
20
f = 0.2 GHz
50
REACTANCE COMPONENT
R
––––
0.2
Z
O
(
)
5.0
0.8
0.8
0.6
0.6
0.37
0.13
0.4
0.4
0.2
0.2
−90
0.38
0.39
0.12
0.11
−1
00
0.40
0.10
−
11
0
0.4
1
0.0
0
9
.4
0
2
−
1
.08
0.
20
4
0.
3
0
−
1
7
30
NE
G
0.
4
0.6
3.
0.8
0
0.3
4.0
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
0
1.
6.0
0.2
10
0.1
f = 20 GHz
20
50
0.25
0.25
0
0.3
0.2
0
0
0.26
0.27
0.24
0.2
0.23
8
0.2
−
10
0.2
2
9
−
20
0.2
1
−
3
0
−
4
0
0.
0.
31
19
S
12e
-FREQUENCY
CONDITION
90°
60°
V
CE
= 10 V
I
C
= 20 mA
30°
−30°
−60°
5
