JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3838K
FEATURES
Power dissipation
P
CM
:
0.15
W (Tamb=25℃)
0.
0. 95¡ À 025
1. 02
TRANSISTOR (NPN)
SOT-23-3L
1.
BASE
2.
EMITTER
3.
COLLECTOR
2. 80¡ À 05
0.
1. 60¡ À0. 05
Collector current
0.05
A
I
CM
:
Collector-base voltage
20
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR) CBO
V
(BR) CEO
V
(BR) EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Test
conditions
MIN
20
11
3
0.5
0.5
27
270
0.5
1.4
V
GHz
TYP
MAX
UNIT
V
V
V
Ic=10
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
= 10
µ
A, I
C
=0
V
CB
= 10 V , I
E
=0
V
EB
= 2V ,
I
C
=0
0. 35
2. 92¡ À0. 05
1. 9
µ
A
µ
A
V
CE
= 10V, I
C
= 5mA
I
C
=-10 mA, I
B
= 5mA
V
CE
=10V, I
C
= 10mA
f = 500MHz
V
CE
=6V, I
C
= 2mA
f = 500MHz
f
T
F
Noise figure
4
dB
CLASSIFICATION OF h
FE
Rank
Range
L
27-56
M
39-82
N
56-120
P
82-180
Q
120-270
Marking
AD
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