JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SC4003
TRANSISTOR (NPN)
TO-252
FEATURES
h
FE
=60 to 200
High h
FE
low V
CE(sat)
V
CE(sat)
=0.6V
1. BASE
123
123
2. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
5
0.2
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test
otherwise
conditions
specified)
Min
400
400
5
0.1
0.1
60
200
0.6
1
70
V
V
MHz
Typ
Max
Unit
V
V
V
µA
µA
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=300V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=50mA
I
C
=50mA,I
B
=5mA
I
C
=50mA,I
B
=5mA
V
CE
=30V,I
C
=10mA
CLASSIFICATION OF
Rank
Range
h
FE
D
60-120
E
100-200
A,Jun,2011
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