JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
2SC4115S
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Low V
CE(sat)
.
Excellent Current Gain Characteristics.
Complements The 2SA1585S.
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
6
2
300
417
150
-55~+150
2. COLLECTOR
3. BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
*
Test
conditions
Min
40
20
6
Typ
Max
Unit
V
V
V
I
C
=0.05mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.05mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=100mA
I
C
=2A,I
B
=0.1A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=2V,I
C
=0.5A, f=100MHz
0.1
0.1
120
25
290
560
0.5
μA
μA
V
pF
MHz
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120-270
R
180-390
S
270-560
A,Dec,2010