JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523
2SC4617
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
SOT-523
1.
BASE
FEATURES
Low Cob:Cob=2.0pF(Typ)
Complement to 2SA1774
2. EMITTER
3.
COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
7
150
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=50uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50uA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=12V, I
C
=2mA, f=100MHz
V
CB
=12V, I
E
=0, f=1MHz
180
3.5
120
Min
60
50
7
0.1
0.1
560
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
A,May,2011
Typical Characteristics
I
C
200
2SC4617
h
FE
1000
——
V
CE
COMMON EMITTER
T
a
=25
℃
——
I
C
COMMON EMITTER
V
CE
=6V
1/0.9/0.8mA
160
T
a
=100
℃
0.7mA
0.6mA
0.5mA
300
(mA)
I
C
COLLECTOR CURRENT
0.4mA
DC CURRENT GAIN
120
h
FE
T
a
=25
℃
100
0.3mA
80
0.2mA
40
30
I
B
=0.1mA
0
0
4
8
12
16
20
24
10
0.1
0.3
1
3
10
30
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURREMT
I
C
(mA)
V
CEsat
——
1000
I
c
100
I
C
COMMON EMITTER
I
C
/I
B
=10
30
——
V
BE
V
CE
=6V
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
(mA)
10
COLLCETOR CURRENT
I
C
100
3
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
1
30
T
a
=25
℃
0.3
10
0.1
0.3
1
3
10
30
100
200
0.1
0.0
0.2
0.4
0.6
0.8
1.0
COLLECTOR CURRENT
I
c
(mA)
BASE-EMMITER VOLTAGE
V
BE
(V)
C
ob
/C
ib
100
——
V
CB
/V
EB
200
P
c
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
COLLECTOR POWER DISSIPATION
P
c
(mW)
o
——
T
a
30
150
C
(pF)
C
ib
10
CAPACITANCE
100
C
ob
3
50
1
0.1
0
0.3
1
3
10
30
100
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,May,2011
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