JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4618
TRANSISTOR (NPN)
SOT–523
FEATURES
High Voltage and Current
High DC Current Gain
Complementary to 2SC4738
Small Package
APPLICATIONS
General Purpose Amplification
1. BASE
2. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
25
5
50
150
833
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=24V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V,I
C
=1mA , f=100MHz
V
CB
=6V, I
E
=0, f=1MHz
150
2.2
56
conditions
Min
40
25
5
500
500
270
0.3
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
N
56–120
AN
P
82–180
AP
Q
120–270
AQ
A,Oct,2010
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