JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
TO – 3P
2SC5287
TRANSISTOR (NPN)
1. BASE
FEATURES
High Breakdown Voltage
High Speed Switching
APPLICATIONS
For Switching Regulator and General Purpose Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
T
C
=25℃
Thermal Resistance From Junction To Ambient
Value
900
550
7
5
80
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
*
*
*
*
Test
conditions
Min
900
550
7
Typ
Max
Unit
V
V
V
I
C
=1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=800V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=4V, I
C
=1.8A
I
C
=1.8A,I
B
=0.36A
I
C
=1.8A,I
B
=0.36A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=12V,I
C
=0.35A
V
(BR)EBO
100
100
10
25
0.5
1.2
50
6
μA
μA
V
V
pF
MHz
V
CE(sat)
C
ob
f
T
V
BE (sat)
A,Dec,2010
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