JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC5345
TRANSISTOR (NPN)
FEATURES
RF amplifier
High current transition frequency f
T
=550MHz(Typ.),
[V
CE
=6V, I
E
=-1mA]
Low output capacitance :
C
ob
=1.4pF(Typ.) [V
CB
=6V, I
E
=0]
Low base time constant and high gain
Excellent noise response
Marking: 5345
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
30
20
4
20
300
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
1.
BASE
2.
EMITTER
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=10μA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0, f=1MHz
550
1.4
40
Min
30
20
4
0.5
0.5
240
0.3
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
R
40-80
O
70-140
Y
120-240
A,May,2011
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