JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3P(H)IS package
・High
voltage;high speed
・Low
collector saturation voltage
APPLICATIONS
・Horizontal
deflection output for high
resolution display,color TV
・High
speed switching applications
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
2SC5404
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Emitter
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
9
18
4.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5404
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=7A; I
B
=1.75A
I
C
=7A; I
B
=1.75A
V
CB
=1500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=7A ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
I
E
=0.1A ; V
CE
=10V
10
4
115
2.5
MIN
600
3.0
1.5
1.0
10
40
8
pF
MHz
TYP.
MAX
UNIT
V
V
V
mA
μA
Switching times
t
s
t
f
Storage time
Fall time
I
CP
=5.5A;I
B1(
end
)
=1.1A
f
H
=64kHz
2.5
0.15
3.5
0.3
μs
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5404
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
