JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
2SC5658
General purpose transistors (NPN)
SOT-723
FEATURES
Low C
ob
Complements the 2SA2029
1. BASE
2. EMITTER
3. COLLECTOR
Marking: BQ BR BS
Absolute maximum ratings
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
Limits
60
50
7
150
100
150
-55~+150
Unit
V
V
V
mA
mW
℃
℃
Electrical characteristics (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=12V,I
C
=2mA, f=100MHz
V
CB
=12V,I
E
=0, f=1MHz
180
3.5
120
Min
60
50
7
0.1
0.1
560
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
Classification of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
A,May,2011
电子工程世界
