JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD0602A
TRANSISTOR (NPN)
SOT–23
FEATURES
Low Collector to Emitter Saturation Voltage
Mini Type Package
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
500
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
f
T
C
ob
Test conditions
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=0.15A
V
CE
=10V, I
C
=0.5A
I
C
=0.3A, I
B
=0.03A
V
CE
=10V,I
C
=0.05A, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
200
15
85
40
0.6
V
MHz
pF
Min
60
50
5
0.1
0.1
340
Typ
Max
Unit
V
V
V
µA
µA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
MARKING
XQ
85–170
WQ1
XR
120–240
WR1
XS
170–340
WS1
A,Oct,2010
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