Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1409
DESCRIPTION
・With
TO-220F package
・High
DC current gain
・Monolithic
construction with built-in base-emitter
shunt resistor
APPLICATIONS
・Igniter
applications
・High
volitage switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
400
5
6
1
25
W
UNIT
V
V
V
A
A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1409
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
V
ECF
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector forward voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=4A ;I
B
=0.04A
I
C
=4A ;I
B
=0.04A
I
E
=4A; I
B
=0
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
f=1MHz ; V
CB
=50V;I
E
=0
600
100
35
pF
MIN
400
2.0
2.5
3.0
0.5
3
TYP.
MAX
UNIT
V
V
V
V
mA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=0.04A
V
CC
=100V ,R
L
=25Ω
1
8
5
μs
μs
μs
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1409
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
