JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SD1468S
TRANSISTOR (NPN)
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
mW
℃
℃
FEATURES
Low
Saturation Voltage
Ideal for
Voltage, High Current Drives,
High DC
Current Gain
and
High Current
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
15
5
1
300
150
-55-150
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=100mA
I
C
=500mA, I
B
=50mA
B
conditions
Min
30
15
5
Typ
Max
Unit
V
V
V
0.5
0.5
120
560
0.4
50
30
μA
μA
V
MHz
pF
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE
Q
120-270
R
180-390
S
270-560
A,Jun,2011
电子工程世界
