JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD1758
TRANSISTOR (NPN)
TO-252
FEATURES
Low V
CE(sat)
.V
CE(sat)
= 0.5V (Typ.)(I
C
/I
B
=2A/0.2A)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base
Voltage
Value
40
32
5
2
1.2
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.BASE
2.COLLECTOR
3.EMITTER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
specified)
Min
40
32
5
1
1
82
390
0.8
100
30
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=500mA
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE
P
82-180
Q
120-270
R
180-390
A,Jun,2011
电子工程世界
