JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1761
TRANSISTOR (NPN)
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low collector saturation voltage:
V
ce(sat)
=0.3V(Typ.),I
C
/I
B
=2A/0.2A
Excellent current characteristics of DC current gain.
Large collector power dissipation: P
C
=30W(T
C
=25℃)
Complementary pair with 2SB1187
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
p
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Parameter
Value
80
60
5
3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
MIN
80
60
5
10
10
60
320
1
1.5
8
90
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
uA
uA
I
C
=50uA, I
E
=0
I
C
=1mA,I
B
=0
I
E
=50uA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=0.5A
I
C
=2A,I
B
=0.2A
I
C
=2A,I
B
=0.2A
V
CE
=5V,I
C
=0.5A
V
CB
=10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
D
60-120
E
100-200
F
160-320
Typical Characteristics
2SD1761
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