JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO – 220
2SD1762
TRANSISTOR (NPN)
1. BASE
FEATURES
Low V
CE(sat)
Complements the 2SB1185
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
3
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
*
Test
conditions
Min
60
50
5
Typ
Max
Unit
V
V
V
I
C
=50µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50µA,I
C
=0
V
CB
=40V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=3V, I
C
=0.5A
I
C
=2A,I
B
=0.2A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=0.5A, f=30MHz
1
1
60
40
90
320
1
μA
μA
V
pF
MHz
V
CE(sat)
C
ob
f
T *
CLASSIFICATION OF h
FE
RANK
RANGE
D
60-120
E
100-200
F
160-320
A,Dec,2010
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