JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD1899
TRANSISTOR (NPN)
TO – 252
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low V
CE(sat)
High Transition Frequency
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
7
3
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)
*
Test
conditions
Min
60
60
7
Typ
Max
Unit
V
V
V
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=2V, I
C
=0.2A
V
CE
=2V, I
C
=0.6A
V
CE
=2V, I
C
=2A
10
10
60
100
50
0.25
1.2
30
120
400
μA
μA
h
FE(3)*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
V
CE(sat)
C
ob
f
T
*
*
V
BE(sat)
I
C
=1.5A,I
B
=0.15A
I
C
=1.5A,I
B
=0.15A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=1.5A
V
V
pF
MHz
CLASSIFICATION OF h
FE(2)
RANK
RANGE
M
100-200
L
160-320
K
200-400
Typical Characteristics
2000
2SD1899
h
FE
—— I
C
COMMON EMITTER
V
CE
= 2V
T
a
=100
℃
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
9.0mA
8.1mA
7.2mA
6.3mA
5.4mA
h
FE
DC CURRENT GAIN
400
(mA)
1500
300
COLLECTOR CURRENT
I
C
1000
4.5mA
3.6mA
2.7mA
T
a
=25
℃
200
500
1.8mA
I
B
=0.9mA
100
0
0
1
2
3
4
5
6
0
0.01
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
0.1
I
C
(A)
1
3
1200
V
BEsat
——
I
C
β=10
1000
V
CEsat
——
I
C
β=10
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
600
T
a
=25
℃
400
0.01
0.1
1
3
10
0.01
0.1
1
3
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(W)
T
a
=25
℃
1.2
P
C
——
T
a
C
ib
(pF)
1.0
CAPACITANCE
C
100
C
ob
0.8
0.6
10
0.4
0.2
1
0.1
1
10
20
0.0
0
25
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
电子工程世界
综合技术交流
