SMD Type
NPN Transistors
2SD1918
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
■
Features
●
High breakdown voltage.
●
High transition frequency
●
Complementary to 2SB1275
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
Low collector output capacitance.
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
160
160
5
1.5
3
10
1
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= 100 uA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100 uA， I
C
= 0
V
CB
= 120 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=1 A, I
B
=100mA
I
C
=1 A, I
B
=100mA
V
CE
= 5V, I
C
= 100mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 5V, I
E
= -100 mA,f=1MHz
120
20
80
Min
160
160
5
1
1
2
1.5
390
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
2SD1918-Q
120-270
2SD1918-R
180-390
3
.8
0
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1
SMD Type
NPN Transistors
2SD1918
■
Typical Characterisitics
1.0
Ta=25°
C
Transistors
10
COLLECTOR CURRENT : I
C
(A)
A
10m
9mA
8mA
7mA
6mA
V
CE
=5V
1000
500
DC CURRENT GAIN : h
FE
Ta=25°
C
COLLECTOR CURRENT : I
C
(A)
5
2
1
0.5
0.2
0.1
0.05
0.02
Ta=100°
C
Ta=25°
C
Ta=
−25°
C
0.8
200
100
50
20
10
5
2
5V
V
CE
=10V
0.6
4mA
5mA
0.4
3mA
2mA
0.2
0
I
B
=1m
A
0
1
2
3
4
5
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current (
1
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
500
DC CURRENT GAIN : h
FE
V
CE
=5V
Ta=100°
C
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
Ta=25°
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
1000
10
5
2
1
0.5
0.2
0.1
−25°
C
V
CE(sat)
0.02 0.05
0.1
0.2
0.5
1
2
V
BE(sat)
Ta=
−25°
C
25°
C
100°
C
I
C
/I
B
=10
200
100
50
20
10
5
2
1
0.01
25°
C
−25°
C
I
C
/I
B
=20
10
0.05
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
5
10
Fig.4 DC current gain vs. collector current (
2
)
Fig.5 Collector-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
1000
TRANSITION FREQUENCY : f
T
(MHz)
COLLECTOR CURRENT : I
C
(A)
500
200
100
50
20
10
5
2
1
−1
−2
−5
−10
−20
−50
Ta=25°
C
V
CE
=5V
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
10
Ta=25°
C
f=1MHz
I
E
=0A
5
2
1
500m
200m
100m
50m
20m
10m
5m
Ic
Max
(Pulse
＊
)
Pw
0m
=1
=1
Pw
00
ms
Ta=25°
C
＊Single
nonrepetitive
pulse
s
＊
D
C
＊
−100 −200
−500 −1000
EMITTER CURRENT : I
E
(mA)
20
50
100
2m
1m
0.1 0.2
0.5
1
2
5
10 20
50 100 200
500 1000
Fig.7 Gain bandwidth products vs. emitter current
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (2SD1918)
2
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