JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SD1994A
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Low Collector to Emitter Saturation Voltage
Complementary Pair with 2SB1322A
Allowing Supply with the Radial Taping
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
1
625
200
150
-55~+150
2. COLLECTOR
3. BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
BE
C
ob
f
T
*
*
*
*
Test
conditions
Min
60
50
5
Typ
Max
Unit
V
V
V
I
C
= 0.01mA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=10V, I
C
=0.5A
V
CE
=5V, I
C
=1A
I
C
=0.5A,I
B
=0.05A
V
CE
=0.5V, I
C
=0.05A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
= 0.05A, f=200MHz
0.1
0.1
85
50
0.4
1.2
20
200
340
μA
μA
V
CE(sat)
V
V
pF
MHz
CLASSIFICATION OF h
FE
RANK
RANGE
Q
85-170
R
120-240
S
170-340
A,Dec,2010
电子工程世界
