JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD2583
TRANSISTOR (NPN)
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Low V
CE(sat)
High DC Current Gain
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
30
6
5
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
CE(sat)3
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
V
BE(sat)
C
ob
f
T
Test
conditions
Min
30
30
6
0.1
0.1
150
50
0.15
0.25
0.5
1.5
77
120
V
V
V
V
pF
MHz
600
Typ
Max
Unit
V
V
V
μA
μA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=4A
I
C
=1A,I
B
=0.05A
I
C
=2A,I
B
=0.1A
I
C
=4A,I
B
=0.2A
I
C
=2A,I
B
=0.1A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
=50mA
A,Dec,2010
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