JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SD596
SOT-23-3L
TRANSISTOR (NPN)
FEATURES
High DC Current gain.h
FE
:200 TYP.(V
CE
=1V,I
C
=100mA)
Complimentary to 2SB624
1.BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
700
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
* Pulse test : Pulse width
≤350μs,Duty
Cycle≤2%.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE
*
f
T
C
ob
Test
conditions
I
E
=0
MIN
30
25
5
0.1
0.1
110
50
0.6
0.6
170
12
0.7
V
V
MHz
pF
400
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,
I
C
= 1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=30V , I
E
=0
V
EB
= 5V , I
C
=0
V
CE
= 1V, I
C
= 100mA
V
CE
=1V, I
C
= 700mA
I
C
=700mA, I
B
=70mA
V
CE
=6V, I
C
=10mA
V
CE
=6V, I
C
= 10mA
V
CB
=6V,I
E
=0,f=10MHZ
CLASSIFICATION OF h
FE(1)
Marking
Range
DV1
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
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