JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SD667,2SD667A
TO-92MOD
1.
EMITTER
2.
COLLECTOR
3.
BASE
TRANSISTOR (NPN)
FEATURES
Low
Frequency Power Amplifier
Complementary
Pair
with 2SB647/A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
2SD667
2SD667A
V
EBO
I
C
P
C
T
J
T
stg
Value
120
80
100
5
1
900
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
2SD667
Range
2SD667A
60-120
100-200
h
FE(1)
B
60-120
C
100-200
D
160-320
160-320
V
CE(sat)
V
BE
f
T
C
ob
V
CE
=5V,I
C
=500mA
I
C
=500mA,I
B
=50mA
V
CE
=5V,I
C
=150mA
V
CE
=5V,I
C
=150mA
V
CB
=10V,I
E
=0,f=1MHz
140
12
Test
conditions
Min
120
2SD667
2SD667A
80
100
5
10
10
2SD667
2SD667A
60
60
30
1
1.5
V
V
MHz
pF
320
320
Typ
Max
Unit
V
V
V
V
μA
μA
I
C
=10μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=100V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=150mA
A,Jun,2011
电子工程世界
