JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
2SD780/2SD780A
FEATURES
Power dissipation
P
CM:
0.2
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
W (Tamb=25℃)
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
Collector current
0.3
A
I
CM:
Collector-base voltage
60
V 2SD780
V
(BR)CBO
:
80
V 2SD780A
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test
conditions
2SD780
2SD780A
Ic=
1
mAI
B
=0
2SD780
2SD780A
I
E
=
0.1m
A, I
C
=0
V
CB
=
50
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
1
V, I
C
=
50
mA
V
CE
=
2
V, I
C
=
300
mA
I
C
=
300
mA, I
B
=
30
mA
V
CE
=
6
V, I
C
=
10
mA
V
CE
=
6
V, I
C
=
10
mA
V
CB
=
6
V, I
E
=0, f=
1
MHz
0.6
MIN
TYP
MAX
0. 35
2. 92¡ À0. 05
1. 9
UNIT
V
Ic=
0.1
mA, I
E
=0
60
80
60
80
5
0.1
0.1
110
30
0.6
0.7
140
7
400
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
V
µA
µA
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
2SD780
Marking
2SD780A
D51
D52
D53
D54
D55
110-180
DW1
135-220
DW2
170-270
DW3
200-320
DW4
250-400
DW5
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