JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SD879
TRANSISTOR (NPN)
TO-92
FEATURES
In
Applications Where Two
NiCd
Batteries
are
Used
to rovide
2.4V, two 2SD879s are used.
The charge time is approximately 1 second faster Than that of
germanium transistors.
Less power dissipation because of low Collector-to-Emitter
Voltage V
CE(sat)
, permitting more flashes of light to be emitted.
Small package and large allowable collector dissipation (TO-92,
P
C
=750mW).
Large current capacity and highly resistant to break-down.
Excellent linearity of h
FE
in the region from low current to high
current. Power amplifier applications
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
CEX
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
10
20
6
3
750
150
-55-150
Unit
V
V
V
V
A
mW
℃
℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
(BR)CEO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
*
Symbol
V
(BR)CBO
V
(BR)CEX
Test
conditions
Min
30
20
10
6
Typ
Max
Unit
V
V
V
V
I
C
=10µA , I
E
=0
I
C
=1mA , V
BE
=3V
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V ,
V
EB
=4V ,
V
CE
=2V,
I
E
=0
I
C
=0
I
C
=3A
V
(BR)EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
*
1
1
140
0.4
200
30
µA
µA
I
C
=3A, I
B
=60mA
V
CE
=10V, I
C
=50mA
V
CB
=10V,f=1MHz
V
MHz
pF
PULSE TEST
A,May,2011
电子工程世界
