JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SD880
TRANSISTOR (NPN)
TO-220
FEATURES
Low frequency power amplifier
Complement to 2SB834
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
60
7
3
1.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition Frequency
Collector output capacitance
Turn on time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE
f
T
C
ob
t
on
t
s
t
f
I
B1
=-I
B2
=0.2A, I
C
=2A
V
CC
=30V, PW=20µs
Test
conditions
MIN
60
60
7
100
100
60
300
1
1
3
70
0.8
1.5
0.8
V
V
MHz
pF
µs
µs
µs
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
=100µA, I
E
=0
I
C
=50mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=500mA
I
C
=3A, I
B
=300mA
I
C
=0.5A, V
CE
= 5V
V
CE
=5 V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
O
60-120
Y
100-200
GR
150-300
A,Mar,2011
Typical Characteristics
2SD880
A,Mar,2011
电子工程世界
综合技术交流
