JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SD965
TRANSISTOR (NPN)
1. BASE
FEATURES
Low Collector-Emitter Saturation Voltage
Large Collector Power Dissipation and Current
Mini Power Type Package
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
7
5
750
167
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
Test
conditions
Min
40
20
7
0.1
0.1
200
230
150
1
150
50
V
MHz
pF
800
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=10V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=2V, I
C
=1mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=2A
I
C
=3A,I
B
=0.1A
VCE=6V,IC=50mA，
f=200MHz
V
CB
=20V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE
（
2
）
RANK
RANGE
Q
230–380
R
340–600
S
560–800
A,Nov,2010
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