SMD Type
MOSFET
MOS Field Effect Transistor
2SK680A
SOT-89
Unit: mm
+0.1
1.50
-0.1
Features
Directly driven by Ics having a 5V power source.
Not necessary to consider driving current because of
its high input impeance.
+0.1
4.50
-0.1
1.80
+0.1
-0.1
+0.1
2.50
-0.1
R
DS(on)
=1.0ÙMAX. @V
GS
=4.0V,I
D
=0.5A
R
DS(on)
=0.70ÙMAX. @V
GS
=10V,I
D
=0.5A
+0.1
0.80
-0.1
Has low on-state resistance
1
+0.1
0.48
-0.1
2
3
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
T
ch
T
stg
Rating
30
20
1.0
2.0
2.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
I
D
=0.5A,V
GS(on)
=10V,R
G
=10
,V
DD
=25V,R
L
=50Ù
V
DS
=5.0V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=30V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=0.5A
V
GS
=4V,I
D
=0.5A
V
GS
=10V,I
D
=0.5A
1.0
0.4
0.6
0.4
130
70
30
12
44
310
160
1.0
0.7
1.6
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
Ù
Ù
pF
pF
pF
ns
ns
ns
ns
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