2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
See to P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
150
V
V
DSX *5
120
A
Continuous drain current
I
D
±57
A
Pulsed drain current
I
D(puls]
±228
V
Gate-source voltage
V
GS
±30
A
Non-repetitive Avalanche current I
AS *2
57
mJ
Maximum Avalanche Energy
E
AS *1
272.5
kV/µs
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/µs
°C
Max. power dissipation
P
D
Ta=25
1.67
W
°C
Tc=25
270
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph
*2 Tch <150°C
=
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*4 V
DS
< 150V *5 V
GS
=-30V
=
=
=
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=150V V
GS
=0V
V
DS
=120V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=20A
V
GS
=10V
R
GS
=10
Ω
V
CC
=75V
I
D
=40A
V
GS
=10V
L=123µH T
ch
=25°C
I
F
=40A V
GS
=0V T
ch
=25°C
I
F
=40A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
31
26
1940
310
24
20
26
50
20
52
15
18
1.10
0.14
0.77
Min.
150
3.0
Typ.
Max.
5.0
25
250
100
41
2910
465
36
30
39
75
30
78
22.5
27
1.65
Units
V
V
µA
nA
mΩ
S
pF
13
ns
nC
57
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.463
75.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3592-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
300
1000
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
250
800
200
600
150
I
AS
=23A
E
AS
[mJ]
PD [W]
400
I
AS
=35A
100
I
AS
=57A
200
50
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Tc [
°
C]
starting Tch [
°
C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
160
20V
100
10V
120
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
80
7.5V
7.0V
ID[A]
8V
10
1
40
6.5V
6.0V
VGS=5.5V
0.1
12
0
1
2
3
4
5
6
7
8
9
10
0
0
2
4
6
8
10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
0.15
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=
5.5V 6.0V
0.12
6.5V 7.0V
7.5V
RDS(on) [
Ω
]
10
0.09
8V
gfs [S]
10V
0.06
20V
1
0.03
0.1
0.1
0.00
1
10
100
0
40
80
120
160
ID [A]
ID [A]
2
2SK3592-01L,S,SJ
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
100
90
80
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
7.0
6.5
6.0
5.5
5.0
max.
RDS(on) [ m
Ω
]
VGS(th) [V]
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
typ.
max.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
Tch [
°
C]
Tch [
°
C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A, Tch=25°C
10
14
12
10
0
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
10
VGS [V]
8
6
C [nF]
Vcc= 75V
Coss
10
4
-1
Crss
2
0
0
20
40
60
80
-2
10
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
tf
10
2
10
td(off)
IF [A]
t [ns]
td(on)
1
1
10
tr
0.1
0.00
10
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3592-01L,S,SJ
10
2
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2 3
1
4 2
3
1
2 3
1
2
3
http://www.fujielectric.co.jp/denshi/scd/
4
MSPM0 MCU
