2SK973
L
, 2SK973
S
Silicon N-Channel MOS FET
Application
DPAK-1
4
4
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
•
•
•
•
2, 4
12
3
12
3
S type
1. Gate
2. Drain
3. Source
4. Drain
3
L type
1
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
≤
10 µs, duty cycle
≤
1 %
Value at T
C
= 25 °C
Symbol
V
DSS
V
GSS
I
D
I
D(peak)
*
I
DR
Pch**
Tch
Tstg
Ratings
60
±20
2
8
2
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
2SK973 L , 2SK973 S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Min
60
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
———————————————————————————————————————————
———————————————————————————————————————————
±20
—
—
V
———————————————————————————————————————————
—
—
1.0
—
—
—
—
0.25
0.40
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
1.2
—
—
—
—
—
—
—
—
2.0
240
115
35
4
15
80
40
1.0
±10
100
2.0
0.35
0.50
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 2 A, V
GS
= 0
I
F
= 2 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
Ω
µA
µA
V
Ω
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————
——————————–
I
D
= 1 A, V
GS
= 4 V *
I
D
= 1 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
———————————————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
—
70
—
ns
———————————————————————————————————————————
2SK973 L , 2SK973 S
Power vs. Temperature Derating
15
Channel Dissipation Pch (W)
50
30
Drain Current I
D
(A)
10
Maximum Safe Operation Area
10
5
)
t
on
in
DS (
3
n R
tio
ra d by
e
1.0
Op ite
lim
s
hi
e
ar
a
is
10
µs
10
PW
0
µ
s
DC
=
1
m
s(
1
Op
10
s
m
Sh
ot
)
er
ati
o
0.3
0.1
Ta = 25°C
n(
T
C
=
25
°C
)
0
50
100
150
0.05
0.1
Case Temperature T
C
(°C)
0.3
1.0
3
10
30
100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
5V
4V
3.5 V
Pulse Test
5
Typical Transfer Characteristics
–25°C
4
Drain Current I
D
(A)
V
DS
= 10 V
Pulse Test
75°C
T
C
= 25°C
4
Drain Current I
D
(A)
3
3V
3
2
2
1
2.5 V
V
GS
= 2 V
1
0
6
2
4
8
10
Drain to Source Voltage V
DS
(V)
0
3
1
2
4
Gate to Source Voltage V
GS
(V)
5
2SK973 L , 2SK973 S
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2.0
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.6
5A
1.2
Pulse Test
5
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
2
1.0
0.5
10 V
0.2
0.1
0.05
0.2
V
GS
= 4 V
0.8
2A
0.4
I
D
= 1 A
0
6
2
4
8
10
Gate to Source Voltage V
GS
(V)
0.5 1.0
5
2
10
Drain Current I
D
(A)
20
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
Forward Transfer Admittance
yfs
(S)
1.0
10
5
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
–25°C
Pulse Test
T
C
= 25°C
0.8
I
D
= 2 A
0.6
V
GS
= 4 V
0.4
5A
0.2
V
GS
= 10 V
1 A, 2 A
1A
2
1.0
0.5
75°C
0.2
0.1
0.05
0
–40
0
40
120
80
Case Temperature T
C
(°C)
160
0.1
0.2
2
0.5 1.0
Drain Current I
D
(A)
5
2SK973 L , 2SK973 S
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1000
300
Capacitance C (pF)
100
30
10
3
1
0.5 1.0
2
5
10
Reverse Drain Current I
DR
(A)
20
0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Coss
200
100
50
Crss
20
10
5
0.2
10
20
50
30
40
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
V
DD
= 50 V
25 V
60
V
DS
40
20
V
DD
= 50 V
25 V
10 V
2
V
GS
I
D
= 2 A
8
4
10 V
12
20
Gate to Source Voltage V
GS
(V)
16
100
Switching Characteristics
t
d (off)
50
Switching Time t (ns)
t
f
20
t
r
10
5
t
d (on)
2
1
0.05
V
GS
= 10 V
PW = 2µs, duty < 1 %
0.1
0.5 1.0
0.2
2
Drain Current I
D
(A)
5
0
4
6
8
Gate Charge Qg (nc)
0
10
嵌入式系统
