首页 > 器件类别 > 半导体 > 分立半导体

2W005

2 A, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:SHUNYE

厂商官网:http://www.shunyegroup.com.cn/

下载文档
文档预览
2W005 – 2W10
SILICON BRIDGE RECTIFIERS
2.0A BRIDGE RECTIFIER
Features
!
!
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
UL Recognized File # E157705
A
B
+
~
~
-
RB-20
Dim
Min
Max
A
9.10
9.40
B
6.90
7.40
C
27.9
D
25.4
E
0.71
0.81
G
4.60
5.60
All Dimensions in mm
C
D
E
~
-
+
G
G
~
Mechanical Data
!
!
!
!
!
!
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
Peak Reverse Current
At Rated DC Blocking Voltage
Operating Temperature Range
Storage Temperature Range
@I
F
= 2.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
2W005
2W01
2W02
2W04
2W06
2W08
2W10
Unit
50
35
100
70
200
140
400
280
2.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
T
j
T
STG
50
1.0
10
500
-55 to +125
-55 to +150
A
V
µA
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2W005 – 2W10
www.shunyegroup.com.cn
2.0
Single phase half-sine-wave
60Hz resistive or inductive load
10
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, AVERAGE FORWARD CURRENT (A)
1.5
1.0
1.0
0.1
0.5
T
j
= 25°C
Pulse width = 300µs
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
0.01
0.2
0.6
1.0
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, per element
60
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Pulse Width 8.3 ms
Single Half-Sine-Wave
(JEDEC Method)
100
T
j
= 25°C
f = 1mz
40
30
C
j
, JUNCTION CAPACITANCE (pF)
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
50
10
20
10
0
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
200
100
T
j
= 100°C
10
1.0
T
j
= 25°C
0.1
0.01
120
0
40
80
160
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2W005 – 2W10
www.shunyegroup.com.cn
查看更多>
参数对比
与2W005相近的元器件有:2W01、2W02、2W04、2W06、2W08、2W10。描述及对比如下:
型号 2W005 2W01 2W02 2W04 2W06 2W08 2W10
描述 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消