首页 > 器件类别 > 分立半导体 > 二极管

30BF20

DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

下载文档
器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
R-PDSO-C2
Reach Compliance Code
unknown
应用
ULTRA FAST RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AB
JESD-30 代码
R-PDSO-C2
最大非重复峰值正向电流
60 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
最大反向恢复时间
0.035 µs
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
文档预览
PD-20713 07/99
30BF.. Series
SURFACE MOUNTABLE
ULTRAFAST RECOVERY DIODE
SMC (DO-214AB)
Major Ratings and Characteristics
Characteristics
10 to 20
I
F(AV)
V
RRM
I
FSM
V
F
@ 3 A, T
J
= 25°C
t
rr
@ T
J
= 25°C
T
J
range
1.0
50
Features
Units
60 to 80
A
V
A
1.7
100
V
ns
°C
30BF..
40
3
100 to 800
100
1.4
50
- 50 to 150
For surface mounted applications
Low profile package
Built in stress releaf
Compatible with all pick & palce equipments
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Glass passivated junction
High temperature soldering:
260°C\10 seconds at terminals
.108 (2.75)
.124 (3.15)
.220 (5.59)
.245 (6.22)
.260 (6.60)
.280 (7.11)
.006 (.152)
.012 (.305)
.079 (2.00)
.103 (2.62)
.030 (0.76)
.060 (1.52)
.004 (.103)
.008 (.203)
.305 (7.75)
.320 (8.13)
Dimensions in inches and (millimeters)
1
30BF.. Series
PD-20713 07/99
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
100
200
400
600
800
V
DC
, maximum
blocking voltage
V
100
200
400
600
800
I
RRM
100°C
µA
500
30BF10
30BF20
30BF40
30BF60
30BF80
Maximum Ratings and Electrical Characteristics
Parameters
10 to 20
30BF..
40
60 to 80
Units
Conditions
A
A
@ T
L
= 75° C
8.3ms single half sine wavesuperimposed
on rated load (JEDEC Method)T
A
= 55° C
I
F(AV)
Maximum Average Forward Current
I
FSM
Peak Forward Surge Current
3
100
V
FM
Max. Instantaneous ForwardVoltage
I
RM
Maximum DC Reverse Current
at Rated DC Blocking Voltage
t
rr
C
J
Reverse Recovery Time
Typical Junction Capacitance
1.0
1.4
10
500
1.7
V
µA
@ 3A
T
A
= 25° C
T
A
= 100° C
50
75
50
75
100
50
ns
pf
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
@ 1.0MHz applied reverse voltage of 4.0V
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
For capacitive load, derate current by 20%.
Mechanical Specifications
Parameters
R
thJ
Maximum Thermal Resistance
T
J
Operating Temperature Range
30BF..
15
- 50 to 150
- 50 to 150
0.21 (0.007)
DO-214AB
Units
Conditions
°C/W 8.0mm
2
(.013mm thick) land areas
°C
°C
g (oz)
JEDEC molded plastic
T
stg
Storage Temperature Range
wt
Approximate Weight
Case Style
2
30BF.. Series
PD-20713 07/99
Instantaneous Reverse Leakage Current (µA)
150
140
130
Lead Temperature (°C)
120
110
100
90
80
70
60
50
0
0.5
1
1.5
2
2.5
3
3.5
Average Forward Current (A)
30BF.. Series
100
T
J
= 150°C
10
T
J
= 100°C
1
T
J
= 25°C
30BF.. Series
0.1
0
20
40
60
80
100
120
140
Percent of Peak Reverse Voltage (V)
Fig. 1 - Maximum Average Forward Current Rating
100
Instantaneous Forward Current (A)
30BF10/20
30BF40
10
30BF60/80
Fig. 2 - Typical Reverse Characteristics
100
30BF.. Series
Peak Forward Surge Current (A)
1
0.1
T
J
= 25°C
Pulse Width = 300µs
2% Duty Cicle
0.6
0.8
1
1.2
1.4
1.6
1.8
8.3ms Single Half Sine Wave
Jedec Method
10
1
10
Number of Cycles at 60 Hz
0.01
0.4
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics
160
140
Capacitance (pF)
120
100
80
(+)
Fig. 4 - Max. Non-Repetitive Forward Surge Characteristic
T
J
= 25°C
f = 1MHz
Vsig = 50mVp-p
50
S
NON
INDUCTIVE
10
S
NON
INDUCTIVE
trr
+0.5A
30BF10/20
D.U.T.
(-)
25V d c
(approx)
PU LSE
GENERATOR
NOTE 2
0
-0.25 A
60
40
20
0.1
30BF40/60/80
(-)
1
S
OSCILLOSCOPE
NON
NOTE 1
INDUCTIVE
(+)
-1 A
SET TIME
BASE FOR
1 0nsec/cm
1cm
1
10
100
1000
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Reverse Recovery Time Characteristic
and Test Circuit Diagram
3
30BF.. Series
PD-20713 07/99
Ordering Information Table
Device Code
30
1
B
2
F
3
80
4
1
2
3
4
-
-
-
-
Current Rating x 10: 30 = 3A
B = DO-214AB (SMC) Surface Mount
F = Ultrafast Recovery
Voltage code: Code = V
RRM
/ 10
Tape & Reel Information
Dimensions in millimeters and (inches)
4
查看更多>
参数对比
与30BF20相近的元器件有:30BF40、30BF80、30BF60、30BF10。描述及对比如下:
型号 30BF20 30BF40 30BF80 30BF60 30BF10
描述 DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
包装说明 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown unknown unknown unknown
应用 ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-214AB DO-214AB DO-214AB DO-214AB DO-214AB
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
最大非重复峰值正向电流 60 A 60 A 60 A 60 A 60 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -50 °C -50 °C -50 °C -50 °C -50 °C
最大输出电流 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大反向恢复时间 0.035 µs 0.05 µs 0.1 µs 0.1 µs 0.035 µs
表面贴装 YES YES YES YES YES
端子形式 C BEND C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL DUAL
厂商名称 Vishay(威世) - - Vishay(威世) Vishay(威世)
【转帖】晶振在实际应用中具体所起的作用
微控制器的时钟源可以分为两类:基于机械谐振器件的时钟源,如晶振、陶瓷谐振槽路; RC(电阻、电容...
皇华Ameya360 DIY/开源硬件专区
如何防止晶振出现不良现象
如何防止晶振出现不良现象,现在介绍严格按照技术要求的规定,对晶振组件进行检漏试验以检查其...
zkj2014 DIY/开源硬件专区
发一个大型PCB厂的技术参数 和 制板流程
技术指标 这基本就是标准了吧 大家不要做个安全间距4mil的哦 没人能生产 当然我只知道这些啊 有不...
yuandayuan6999 PCB设计
[MCU] W806 联盛德 9.9元开发板体验之二---littlevgl8.0移植
搞了一个晚上的移植,鉴于LittevglV8.0稳定版本已移植,对接了底层描点函数,尚未测试...
RCSN 国产芯片交流
Microsoft Platform. Builder for Windows Mobile 5.0无法启动模拟器
我按照帮助文档操作pb,编译完系统后准备用模拟器运行系统,但是在attach Device的时候,弹...
lzg123456 嵌入式系统
ST NUCLEO-WB09KE-BLE_Peripheral_Lite
# BLE_Peripheral_Lite 使用的例程 ! (/data/attachment/f...
rtyu789 RF/无线
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消