HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt,
Low t
rr
, HDMOS
TM
Family
IXFR 32N50Q V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 30 A
=
0.16
Ω
= 250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
30
120
30
1.5
45
5
310
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247
TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 minute leads-to-tab
300
2500
6
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
100
1
0.16
V
V
nA
µA
mA
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1, 2
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
DS98608D(01/04)
© 2004 IXYS All rights reserved
IXFR 32N50Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Note 2
18
28
3950
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
210
35
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
R
G
= 1
Ω
(External),
42
75
20
150
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
26
85
0.40
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
ISOPLUS 247 OUTLINE
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= I
T
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
32
128
1.5
250
0.75
7.5
A
A
V
ns
µC
A
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
I
F
= I
s
,
-di/dt = 100 A/ms,
V
R
= 100 V
Note: 1.
I
T
test condition: I
T
= 16A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Note: 2.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXFR 32N50Q
Figure 1. Output Characteristics at 25
O
C
80
70
60
T
J
= 25
O
C
V
GS
=10V
9V
8V
7V
6V
Figure 2. Output Characteristics at 125
O
C
50
T
J
= 125
O
C
V
GS
= 9V
8V
7V
6V
40
I
D
- Amperes
50
40
30
20
10
0
I
D
- Amperes
30
5V
20
10
4V
5V
0
4
8
12
16
20
0
0
4
8
12
16
20
V
DS
- Volts
V
DS
- Volts
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
2.8
V
GS
= 10V
2.8
2.4
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
V
GS
= 10V
R
DS(ON)
- Normalized
Tj=125 C
0
R
DS(ON)
- Normalized
2.4
2.0
1.6
I
D
= 32A
2.0
1.6
1.2
0.8
25
I
D
= 16A
Tj=25
0
C
1.2
0.8
0
10
20
30
40
50
60
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Figure 5. Drain Current vs. Case Temperature
40
32
Figure 6. Admittance Curves
50
40
I
D
- Amperes
24
16
8
0
I
D
- Amperes
30
20
10
0
T
J
= 125
o
C
T
J
= 25
o
C
-50
-25
0
25
50
75
100 125 150
2
3
4
5
6
T
C
- Degrees C
V
GS
- Volts
© 2004 IXYS All rights reserved
IXFR 32N50Q
14
12
10
Figure 7. Gate Charge
10000
Vds=300V
I
D
=30A
=16A
I
G
=10mA
Figure 8. Capacitance Curves
Ciss
F = 1MHz
Capacitance - pF
V
GS
- Volts
8
6
4
2
0
0
50
100
150
200
250
Coss
1000
Crss
100
0
5
10
15
20
25
Gate Charge - nC
V
DS
- Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
V
GS
= 0V
80
I
D
- Amperes
60
40
20
T
J
=25
O
C
T
J
=125
O
C
0
0.4
0.6
0.8
1.0
1.2
V
SD
- Volts
Figure 10. Transient Thermal Resistance
0.60
0.40
0.20
R(th)
JC
- K/W
0.10
0.08
0.06
0.04
0.02
0.01
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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