JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F
3DA5371
FEATURES
Breakdown Voltage High
Reverse Cut-off Current Small
Saturation Voltage Low
Power dissipation
P
CM
: 1.5W (Tamb=25℃)
25 W (Tcase=25℃)
Plastic-Encapsulate Transistors
TO-220F
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTE
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
Parameter
Value
180
160
6
1.5
150
-55-150
Units
V
V
V
A
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
*Pulse test: t
p
≤300µS, δ≤0.02.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
*
f
T
Test
otherwise specified)
MIN
180
160
6
10
10
60
240
1
50
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=180V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=5V, I
C
=200mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
CLASSIFICATION OF
Rank
Range
h
FE
O
60-140
R
100-240
Typical Characteristics
3DA5371
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