JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
3DA752
FEATURES
Power dissipation
TRANSISTOR (NPN)
TO-251
TO-252-2L
123
1.BASE
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
40
30
5
2
1.2
150
-55-150
Units
V
V
V
A
W
℃
℃
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
Transition frequency
Collector output capacitance
f
T
C
ob
unless otherwise specified)
conditions
MIN
40
30
5
0.1
0.1
100
400
0.8
2
120
13
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
Test
I
C
=100µA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=40V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=500mA
I
C
=2A,I
B
=0.2A
I
C
=1.5A,I
B
=30mA
V
CE
=5V,I
C
=500mA
V
CB
=10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
O
100-200
Y
160-320
G
200-400
Typical Characteristics
3DA752
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