JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DA752
TRANSISTOR (NPN)
TO-251
FEATURES
Power dissipation
P
CM:
1.2
W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current
2
A
I
CM:
Collector-base voltage
40
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
Transition frequency
Collector output capacitance
1
2
3
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=
1m
A, I
C
=0
V
CB
=
40
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
2
V, I
C
=
500
mA
I
C
=
2
A, I
B
=
0.2
A
I
C
=
1.5
A, I
B
=30mA
V
CE
=
5
V, I
C
=
500
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
40
30
5
0.1
0.1
100
400
0.8
2
µA
µA
V
V
MHz
pF
f
T
C
ob
120
13
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
O
100-200
Y
160-320
G
200-400
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