JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
3DD13002
TRANSISTOR (NPN)
FEATURE
· power switching applications
1. BASE
TO-251
TO-252-2L
1
123
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
600
400
6
1
1.25
150
-55-150
Units
V
V
V
A
W
℃
℃
2. COLLECTOR
3. EMITTER
1
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Dc
current
gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
t
f
t
s
Test
conditions
MIN
600
400
6
100
100
100
9
5
0.5
1.1
5
0.5
2.5
V
V
MHz
µs
µs
40
µA
µA
µA
TYP
MAX
UNIT
V
V
I
C
= 100
μ
A，I
E
=0
I
C
= 1mA，I
B
=0
I
E
= 100
μ
A，I
C
=0
V
CB
= 600V，I
E
=0
V
CB
= 400V，I
E
=0
V
EB
= 7V， I
C
=0
V
CE
= 10 V, I
C
= 200mA
V
CE
= 10 V, I
C
= 0.25mA
I
C
=200mA, I
B
= 40mA
I
C
=200mA, I
B
= 40mA
V
CE
=10V, I
C
=100mA
f =1MHz
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
CLASSIFICATION OF h
FE1
Range
9-15
15-20
20-25
25-30
30-35
35-40
Typical characteristics
3DD13002
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